Semiconductor device package and method of manufacturing the same

ABSTRACT

The subject application discloses a substrate. The substrate includes a first conductive layer, a first bonding layer, a first dielectric layer, and a conductive via. The first bonding layer is disposed on the first conductive layer. The first dielectric layer is disposed on the first bonding layer. The conductive via penetrates the first dielectric layer and is electrically connected with the first conductive layer.

BACKGROUND 1. Technical Field

The present disclosure relates to a semiconductor device package and a method of manufacturing the same, and more particularly to a semiconductor device package including a promoter and a method of manufacturing the same.

2. Description of the Related Art

Wireless communication devices, such as cell phones, typically include antennas for transmitting and receiving radio frequency (RF) signals. In recent years, with the continuous development of mobile communication and the pressing demand for high data rate and stable communication quality, relatively high frequency wireless transmission (e.g., 28 GHz or 60 GHz) has become one of the most important topics in the mobile communication industry. As the frequency of signals increases, the signals are mainly transmitted at or near the surface of conductors (e.g., skin effect). Using thicker conductors for signal transmission may increase an insertion loss of the signals. Hence, it is desirable to reduce the insertion loss of the transmitted signals.

SUMMARY

In accordance with some embodiments of the present disclosure, a substrate includes a first conductive layer, a first bonding layer, a first dielectric layer, and a conductive via. The first bonding layer is disposed on the first conductive layer. The first dielectric layer is disposed on the first bonding layer. The conductive via penetrates the first dielectric layer and is electrically connected with the first conductive layer.

In accordance with some embodiments of the present disclosure, a substrate includes a conductive layer, a bonding layer, and a dielectric layer. The conductive layer has a thickness less than 12 micrometers. The bonding layer is disposed on the first conductive layer. The dielectric layer is disposed on the promoter. A bonding force between the conductive layer and the dielectric layer is higher than 5.8N.

In accordance with some embodiments of the present disclosure, a method of manufacturing a substrate includes bonding a bonding layer directly on a conductive layer; and bonding a dielectric layer directly on the bonding layer.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A illustrates a cross-sectional view of a semiconductor device package, in accordance with some embodiments of the present disclosure.

FIG. 1B illustrates an enlarged view of a portion of the semiconductor device package as shown in FIG. 1A, in accordance with some embodiments of the present disclosure.

FIG. 1C illustrates a cross-sectional view of a semiconductor device package, in accordance with some embodiments of the present disclosure.

FIG. 1D illustrates a cross-sectional view of a semiconductor device package, in accordance with some embodiments of the present disclosure.

FIG. 1E illustrates a cross-sectional view of a semiconductor device package, in accordance with some embodiments of the present disclosure.

FIG. 2A, FIG. 2B, FIG. 2C, FIG. 2D, and FIG. 2E illustrate cross-sectional views of a semiconductor manufacturing method, in accordance with some embodiments of the present disclosure.

Common reference numerals are used throughout the drawings and the detailed description to indicate the same or similar components. The present disclosure will be readily understood from the following detailed description taken in conjunction with the accompanying drawings.

DETAILED DESCRIPTION

FIG. 1A illustrates a cross-sectional view of a semiconductor device package 1 (or a portion of the semiconductor device package), in accordance with some embodiments of the present disclosure. FIG. 1B illustrates an enlarged view of a portion of the semiconductor device package 1 encircled by a dotted-line box 1A, in accordance with some embodiments of the present disclosure. The semiconductor device package 1 includes a substrate 10, electrical contacts 11, a promoter 12, dielectric layers 13, 13 a, a conductive layer 14, and conductive vias 14 v. In some embodiments, the semiconductor device package 1 may further include one or more electronic components and/or antennas (not shown) disposed on the conductive layer 14 and electrically connected to the substrate 10 through the conductive vias 14 v and the electrical contacts 11. In some embodiments, the structure as shown in FIG. 1A may be referred to as a substrate.

The substrate 10 (or carrier) may be, for example, a printed circuit board, such as a paper-based copper foil laminate, a composite copper foil laminate, or a polymer-impregnated glass-fiber-based copper foil laminate. The substrate 10 may include an interconnection structure, such as a redistribution layer (RDL) or a grounding element. In some embodiments, the substrate 10 may be a single-layer substrate or multi-layer substrate. In some embodiments, the substrate 10 may include a glass substrate.

The electrical contacts 11 (e.g., conductive pads, a conductive layer, or a metal layer) are disposed on a surface 101 of the substrate 10. The electrical contacts 11 may be spaced apart from each other. In some embodiments, as shown in FIG. 1B, the thickness H1 (e.g., a distance between the upmost portion of the electrical contact 11 and the surface 101 of the substrate 10) of the electrical contact 11 is less than 12 micrometers (μm). For example, the thickness H1 of the electrical contact 11 is less than 3 μm. For example, the thickness H1 of the electrical contact 11 is in a range from 2 μm to 3 μm. In some embodiments, a maximum height H2 of a root (e.g., a distance between the upmost portion of the electrical contact 11 and the bottommost portion of the electrical contact 11) of the electrical contact 11 is less than 2 μm. For example, the maximum height H2 of the root of the electrical contacts 11 is less than 1 μm. For example, the maximum height H2 of the root of the electrical contacts 11 is in a range from 0.3 μm to 1 μm. In accordance with the embodiments of the present disclosure, the insertion loss of signals transmitted through the electrical contacts 11 can be reduced by using electrical contacts having a relatively thinner thickness and/or a relatively shorter root, which can improve the electrical performance of the semiconductor device package 1.

In some embodiments, the electrical contract 11 may be or include a conductive material such as a metal or metal alloy. Examples of the conductive material include gold (Au), silver (Ag), copper (Cu), platinum (Pt), Palladium (Pd), other metal(s) or alloy(s), or a combination of two or more thereof.

The promoter 12 (e.g., surface-active agent (surfactant) or adhesion promoter) is disposed on the substrate 10 and the electrical contacts 11. The promoter 12 at least partially covers the substrate 10 and the electrical contacts 11. For example, the promoter 12 surrounds the electrical contacts 11. For example, the promoter 12 is in contact with a portion of the surface 101 of the substrate 10 exposed from the electrical contacts 11. For example, the promoter 12 is in contact with a lateral surface 113 and a portion of a top surface 111 of each of the electrical contacts 11. A portion of the top surface 111 of each of the electrical contacts 11 is exposed from the promoter 12. In some embodiments, the promoter 12 may include one or more polar compounds. The polar compounds may include moieties or functional groups that can crosslink with a polymeric material or resin. The polar compounds may include moieties or functional groups that can crosslink with metal ions/atoms. The polar compounds may include one or more moieties or functional groups including an amino group, a hydroxyl group, a triazole group, or a combination thereof. The polar compound may include amine, methanol, 3-amino-1,2,4-triazole, or a combination thereof. In some embodiments, a thickness of the promoter 12 is in a range from about 50 Ångstrom (Å) to about 100 Å. In some embodiments, the promoter 12 may be referred to as a bonding layer or an adhesive layer.

The dielectric layer 13 (which can be referred to as a non-metal layer) is disposed on the substrate 10, the electrical contacts 11, and the promoter 12. The dielectric layer 13 is in contact with the promoter 12. The dielectric layer 13 is spaced apart from the electrical contacts 11 through the promoter 12. The dielectric layer 13 is spaced apart from the substrate 10 through the promoter 12. The dielectric layer 13 may include, but is not limited to, molding compounds or pre-impregnated composite fibers (e.g., pre-preg). Examples of molding compounds may include, but are not limited to, an epoxy resin having fillers dispersed therein. Examples of a pre-preg may include, but are not limited to, a multi-layer structure formed by stacking or laminating a number of pre-impregnated materials/sheets.

The dielectric layer 13 a (which can be referred to as a non-metal layer) is disposed on the dielectric layer 13. The dielectric layer 13 a and the dielectric layer 13 may include the same material. Alternatively, the dielectric layer 13 a and the dielectric layer 13 may include different materials. In some embodiments, there may be N dielectric layers disposed on the substrate 10 depending on design requirements, where N is an integer equal to or greater than 1.

In some embodiments, chemical links (e.g., cross-links) or chemical bonds are formed between the promoter 12 and each of the electrical contacts 11 by chemical reactions (e.g., cross-link reactions). In some embodiments, chemical links (e.g., cross-links) or chemical bonds are formed between the promoter 12 and the dielectric layer 13 by chemical reactions (e.g., cross-link reactions). In some embodiments, the functional groups of the promoter 12 may crosslink with the dielectric layer 13 (e.g., the polymeric material or resin of the dielectric layer 13) so as to form chemical bonds between the promoter 12 and the dielectric layer 13. For example, the moieties of functional groups (e.g., a triazole group of the like) of the promoter 12 may form crosslinked polymers with the dielectric layer 13 so as to form a strong crosslinked structure between the promoter 12 and the dielectric layer 13. In some embodiments, the functional groups of the promoter 12 may crosslink with the electrical contacts 11 (e.g., the metal ions/atoms of the dielectric layer 13) so as to form chemical bonds between the promoter 12 and the electrical contacts 11. For example, the moieties of functional groups (e.g., an amino group of the like) of the promoter 12 may serve as a chelating surfactant to coordinate with the metal ions of the electrical contacts 11 so as to form strong chemical bonding between the promoter 12 and the electrical contacts 11.

In some embodiments, the promoter 12 may be omitted, and the dielectric layer 13 is in contact with the electrical contacts 11. As mentioned above, to reduce the insertion loss of the signals transmitted through the electrical contacts 11, the electrical contacts 11 may have a relatively thinner thickness or a relatively shorter root (e.g., a distance between the upmost portion of the electrical contact 11 and the bottommost portion of the electrical contacts 11). However, as the thickness or the root of the electrical contacts 11 decreases, the connection or bonding force between the dielectric layer 13 and the electrical contacts 11 would be weakened, which would cause delamination.

In accordance with the embodiments as shown in FIG. 1A and FIG. 1B, the promoter 12 is disposed between the dielectric layer 13 and the electrical contacts 11. Since the promoter 12 may form chemical bonds with both the dielectric layer 13 and the electrical contacts 11, the bonding or connection force between the dielectric layer 13 and the electrical contacts 11 can be enhanced, and the delamination issue can be eliminated. In some embodiments, in the case that the thickness H1 of the electrical contacts 11 is in a range from 2 μm to 3 μm and/or that the maximum height H2 of the root of the electrical contacts 11 is in a range from 0.3 μm to 1 μm, the semiconductor device package 1 can pass MSL2a test. For example, an interface between the dielectric layer 13 and the electrical contacts 11 can sustain or bear a tensile force equal to or greater than 5.8 N, which is more than two times higher than the tensile force that can be sustained between the dielectric layer 13 and the electrical contacts 11 without the promoter 12. For example, a bonding force between the electrical contacts 11 and the dielectric layer 13 is higher than 5.8N.

In some embodiments, the bonding force between the electrical contacts 11 and the dielectric layer 13 can be measured by, for example, peeling test or any other suitable operations. For example, the stacked structure including the electrical contacts 11, the promoter 12, and the dielectric layer 13 can be fastened on a test platform, and then a force (e.g., a tensile force) is applied to the electrical contacts 11 (or the dielectric layer 13) to pull the electrical contacts 11 (or the dielectric layer 13). The maximum force that can separate the electrical contacts 11 (or the dielectric layer 13) from the promoter 12 can be defined as the bonding force between the electrical contacts 11 and the dielectric layer 13.

The conductive layer 14 is disposed on the dielectric layer 13 a. The conductive vias 14 v penetrate the dielectric layer 13 a, the dielectric layer 13, and the promoter 12 and electrically connect the conductive layer 14 with the electrical contacts 11. The conductive vias 14 v are in contact with the corresponding electrical contacts 11. A lateral surface of each of the conductive vias 14 v is surrounded by the dielectric layer 13 a. The lateral surface of each of the conductive vias 14 v is surrounded by the dielectric layer 13. The lateral surface of each of the conductive vias 14 v is surrounded by the promoter 12. The lateral surface of each of the conductive vias 14 v has a first portion in contact with the dielectric layer 13 a, a second portion in contact with the dielectric layer 13, and a third portion in contact with the promoter 12. In some embodiments, the conductive layer 14 and the conductive via 14 v may be or include a conductive material such as a metal or metal alloy. Examples of the conductive material include Au, Ag, Cu, Pt, Pd, other metal(s) or alloy(s), or a combination of two or more thereof.

FIG. 1C illustrates a cross-sectional view of a semiconductor device package 1C (or a portion of the semiconductor device package), in accordance with some embodiments of the present disclosure. The semiconductor device package 1C is similar to the semiconductor device package 1, except that the semiconductor device package 1C further includes a promoter 12 a disposed between the dielectric layer 13 and the dielectric layer 13 a to enhance the connection or bonding force between the dielectric layer 13 and the dielectric layer 13 a. The promoter 12 a is the same or similar to the promoter 12, and the descriptions for the promoter 12 a can be applicable to the promoter 12.

FIG. 1D illustrates a cross-sectional view of a semiconductor device package 1D (or a portion of the semiconductor device package), in accordance with some embodiments of the present disclosure. The semiconductor device package 1D is similar to the semiconductor device package 1, except that the promoter 12 includes one or more openings to expose a portion of the top surface 111 of the electrical contacts 11. The openings may be filled with the dielectric layer 13. The promoter 12 is spaced apart from the conductive vias 14 v by the dielectric layer 13. In some embodiments, the promoter 12 may include conductive materials or non-conductive materials.

FIG. 1E illustrates a cross-sectional view of a semiconductor device package 1E (or a portion of the semiconductor device package), in accordance with some embodiments of the present disclosure. The semiconductor device package 1E is similar to the semiconductor device package 1, and some of the differences therebetween are described below.

The promoter 12 fully covers the electrical contact 11. For example, the promoter 12 fully covers the top surface 111 and the lateral surfaces 113 of the electrical contact 11. The conductive via 14 v is disposed on the promoter 12. The conductive via 14 v is spaced apart from the electrical contact 11. The promoter 12 does not extend along the surface 101 of the substrate 10. For example, a portion of the promoter 12 covering one electrical contact is spaced apart from another portion of the promoter 12 covering an adjacent electrical contact. In some embodiments, the promoter 12 may include conductive materials. In other embodiments, the promoter 12 may include one or more openings to expose a portion of the top surface 111 of the electrical contacts 11. In other embodiments, the promoter 12 may expose a portion of the lateral surface 113 of the electrical contact 11.

FIG. 2A, FIG. 2B, FIG. 2C, FIG. 2D, and FIG. 2E illustrate cross-sectional views of a semiconductor manufacturing method, in accordance with some embodiments of the present disclosure. In some embodiments, the method in FIG. 2A, FIG. 2B, FIG. 2C, FIG. 2D, and FIG. 2E can be used to manufacture the semiconductor device package 1 as shown in FIG. 1A.

Referring to FIG. 2A, a substrate 10 is provided. Electrical contacts 11 (or conductive layers) are formed on a surface 101 of the substrate 10.

Referring to FIG. 2B, a promoter 12 is formed on the substrate 10 and the electrical contacts 11. In some embodiments, the promoter 12 is in contact with the surface 101 of the substrate 10 and a top surface 111 and lateral surfaces 113 of the electrical contacts 11. The promoter 12 may fully cover the electrical contacts 11. In some embodiments, the promoter 12 may be formed by coating or any other suitable processes. In some embodiments, the electrical contacts 11 may be immersed in a solution with the material of the promoter 12 to form said material on the external surfaces of the electrical contacts 11. Then, a soft bake operation is carried out to the material under a temperature around 100 degrees to volatilize the solvent of the material and to form the promoter 12 via a cross-linking reaction between the material and the electrical contacts 11.

In some embodiments, prior to the formation of the promoter 12, the electrical contacts 11 may be roughened through, for example, etching (e.g., micro-etching) to form the roots on the external surfaces of the electrical contacts 11.

Referring to FIG. 2C, a dielectric layer 13 is formed on the promoter 12. A dielectric layer 13 a is formed on the dielectric layer 13. In some embodiments, the dielectric layers 13 and 13 a may be formed by lamination or any other suitable operations. In some embodiments, prior to the formation of the dielectric layer 13 a, another promoter may be formed on the dielectric layer 13. In some embodiments, after the formation of the dielectric layer 13 on the promoter 12, a soft bake operation is carried out to the dielectric layer 13 and the promoter 12 under a temperature around 100 degrees form a cross-linking between the dielectric layer 13 and the promoter 12. Then, a hard bake operation can be carried out to the dielectric layer 13 under a temperature higher than 200 degrees.

Referring to FIG. 2D, one or more trenches 13 h are formed to penetrate the dielectric layers 13 a, 13, and the promoter 12 to expose a portion of the top surface 111 of the electrical contacts 11. In some embodiments, the trenches 13 h may be formed by, for example, a mechanical drilling, a laser drilling, etching or any other suitable operations.

Referring to FIG. 2E, a conductive material is formed on the dielectric layer 13 a and within the trenches 13 h to form a conductive layer 14 and conductive vias 14 v. The conductive vias 14 v may be in contact with the dielectric layers 13 a, 13, the promoter 12, and the top surface of the electrical contacts 11. In some embodiments, the conductive layer 14 and the conductive vias 14 v may be formed by, for example, plating or any other suitable operations.

As used herein, the terms “substantially,” “substantial,” “approximately,” and “about” are used to denote and account for small variations. For example, when used in conjunction with a numerical value, the terms can refer to a range of variation of less than or equal to ±10% of that numerical value, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. As another example, a thickness of a film or a layer being “substantially uniform” can refer to a standard deviation of less than or equal to ±10% of an average thickness of the film or the layer, such as less than or equal to ±5%, less than or equal to ±4%, less than or equal to ±3%, less than or equal to ±2%, less than or equal to ±1%, less than or equal to ±0.5%, less than or equal to ±0.1%, or less than or equal to ±0.05%. The term “substantially coplanar” can refer to two surfaces within micrometers of lying along a same plane, such as within 40 μm, within 30 μm, within 20 μm, within 10 μm, or within 1 μm of lying along the same plane. Two surfaces or components can be deemed to be “substantially perpendicular” if an angle therebetween is, for example, 90°±10°, such as ±5°, ±4°, ±3°, ±2°, ±1°, ±0.5°, ±0.1°, or ±0.05°. When used in conjunction with an event or circumstance, the terms “substantially,” “substantial,” “approximately,” and “about” can refer to instances in which the event or circumstance occurs precisely, as well as instances in which the event or circumstance occurs to a close approximation.

As used herein, the singular terms “a,” “an,” and “the” may include plural referents unless the context clearly dictates otherwise. In the description of some embodiments, a component provided “on” or “over” another component can encompass cases where the former component is directly on (e.g., in physical contact with) the latter component, as well as cases where one or more intervening components are located between the former component and the latter component.

As used herein, the terms “conductive,” “electrically conductive” and “electrical conductivity” refer to an ability to transport an electric current. Electrically conductive materials typically indicate those materials that exhibit little or no opposition to the flow of an electric current. One measure of electrical conductivity is Siemens per meter (S/m). Typically, an electrically conductive material is one having a conductivity greater than approximately 10⁴ S/m, such as at least 10⁵ S/m or at least 10⁶ S/m. The electrical conductivity of a material can sometimes vary with temperature. Unless otherwise specified, the electrical conductivity of a material is measured at room temperature.

Additionally, amounts, ratios, and other numerical values are sometimes presented herein in a range format. It can be understood that such range formats are used for convenience and brevity, and should be understood flexibly to include not only numerical values explicitly specified as limits of a range, but also all individual numerical values or sub-ranges encompassed within that range as if each numerical value and sub-range is explicitly specified.

While the present disclosure has been described and illustrated with reference to specific embodiments thereof, these descriptions and illustrations do not limit the present disclosure. It can be clearly understood by those skilled in the art that various changes may be made, and equivalent elements may be substituted within the embodiments without departing from the true spirit and scope of the present disclosure as defined by the appended claims. The illustrations may not necessarily be drawn to scale. There may be distinctions between the artistic renditions in the present disclosure and the actual apparatus, due to variables in manufacturing processes and such. There may be other embodiments of the present disclosure which are not specifically illustrated. The specification and drawings are to be regarded as illustrative rather than restrictive. Modifications may be made to adapt a particular situation, material, composition of matter, method, or process to the objective, spirit and scope of the present disclosure. All such modifications are intended to be within the scope of the claims appended hereto. While the methods disclosed herein have been described with reference to particular operations performed in a particular order, it can be understood that these operations may be combined, sub-divided, or re-ordered to form an equivalent method without departing from the teachings of the present disclosure. Therefore, unless specifically indicated herein, the order and grouping of the operations are not limitations of the present disclosure. 

What is claimed is:
 1. A substrate, comprising: a first conductive layer; a first bonding layer disposed on the first conductive layer; a first dielectric layer disposed on the first bonding layer; and a conductive via penetrating the first dielectric layer and electrically connected with the first conductive layer.
 2. The substrate of claim 1, wherein the first dielectric layer includes a first surface and a second surface opposite to the first surface, the conductive via extends from the first surface to the second surface.
 3. The substrate of claim 1, wherein the first bonding layer is configured for a promoter.
 4. The substrate of claim 1, wherein the first bonding layer is configured for an adhesive layer.
 5. The substrate of claim 1, wherein a thickness of the first bonding layer is in a range from about 50 Angstrom (Å) to about 100 Å.
 6. The substrate of claim 1, wherein a thickness of the first conductive layer is equal to or less than 3 micrometers (μm).
 7. The substrate of claim 1, further comprising a carrier on which the first conductive layer is disposed.
 8. The substrate of claim 1, wherein the first bonding layer includes an opening exposed a portion of the first conductive layer.
 9. The substrate of claim 8, wherein the conductive via penetrates the first bonding layer.
 10. The substrate of claim 8, wherein the conductive via is spaced apart from the first bonding layer by the first dielectric layer.
 11. The substrate of claim 1, wherein the first conductive layer is spaced apart from the conductive via by the first bonding layer.
 12. The substrate of claim 1, wherein the first bonding layer is configured for electrically connecting the conductive via to the first conductive layer.
 13. The substrate of claim 1, wherein a first chemical bond is formed between the first conductive layer and the first bonding layer, and a second chemical bond is formed between the first dielectric layer and the first bonding layer.
 14. The substrate of claim 1, further comprising: a second dielectric layer disposed on the first dielectric layer; and a second bonding layer disposed between the first dielectric layer and the second dielectric layer.
 15. A substrate, comprising: a conductive layer having a thickness less than 12 micrometers (μm); a bonding layer disposed on the first conductive layer; and a dielectric layer disposed on the promoter, wherein a bonding force between the conductive layer and the dielectric layer is higher than 5.8N.
 16. The substrate of claim 15, wherein the thickness of the conductive layer is equal to or less than 3 μm.
 17. The substrate of claim 15, further comprising a conductive via penetrating the dielectric layer to be electrically connected to the conductive layer.
 18. A method of manufacturing a substrate, comprising: bonding a bonding layer directly on a conductive layer; and bonding a dielectric layer directly on the bonding layer.
 19. The method of claim 18, further comprising: baking the bonding layer; and forming a chemical bond between the conductive layer and the bonding layer.
 20. The method of claim 19, further comprising: baking the dielectric layer; and forming a chemical bond between the bonding layer and the dielectric layer. 